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| Parameters | |
|---|---|
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 5Ohm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -50V |
| Max Power Dissipation | 960mW |
| Terminal Form | GULL WING |
| Current Rating | -220mA |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 960mW |
| Turn On Delay Time | 3.2 ns |
| Power - Max | 700mW |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5 Ω @ 340mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 66pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 340mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 10V |
| Rise Time | 10ns |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 8 ns |
| Continuous Drain Current (ID) | -340mA |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.34A |
| Drain to Source Breakdown Voltage | -60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -1.9 V |
| Min Breakdown Voltage | 60V |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
These dual P?Channel Enhancement Mode Power Field Effect Transistors are produced using onsemi?ˉs proprietary Trench Technology. This very high density process has been designed to minimize on?state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.
? ?0.34 A, ?60 V RDS(ON) = 5 @ VGS = ?10 V
RDS(ON) = 7 @ VGS = ?4.5 V
? Low Gate Charge
? Fast Switching Speed
? High Performance Trench Technology for Low RDS(ON)
? SUPERSOT?6 Package: Small Footprint (72% smaller than
standard SO?8); Low Profile (1 mm Thick)
? This is a Pb?Free Device
This product is particularly suited to low voltage applications requiring a low current high side switch.
Please send RFQ , we will respond immediately.