NDC7002N

NDC7002N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
NO: 598-NDC7002N
Package: SOT-23-6 Thin, TSOT-23-6
Datasheet:
Stock: 2558
Description: NDC7002N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	2Ohm
Subcategory	FET General Purpose Power
Voltage - Rated DC	50V
Max Power Dissipation	700mW
Terminal Form	GULL WING
Current Rating	350mA
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	960mW
Turn On Delay Time	6 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 510mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	20pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	1nC @ 10V
Rise Time	6ns
Fall Time (Typ)	6 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	510mA
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.51A
Drain to Source Breakdown Voltage	50V
Dual Supply Voltage	50V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1.9 V
Height	900μm
Length	3mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NDC7002N Description

The ON Semiconductor NDC7002N is a dual N-Channel enhancement mode power field effect transistor built using the company's patented high cell density DMOS technology.

NDC7002N Features

High-density cell design for extremely low RDS(ON)
Proprietary SuperSOTTM-6 package design using the copper lead frame for superior thermal and electrical capabilities
0.51 A, 50 V. RDS(ON) = 2 Ω @ VGS = 10 V
High saturation current