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MOSFET 2N-CH 50V 2A 8SOIC
- Manufacturer: ON Semiconductor
- NO: 598-MVDF1N05ER2G
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 4680
- Description: MOSFET 2N-CH 50V 2A 8SOIC(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE, ULTRA LOW ON RESISTANCE |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 50V |
| Continuous Drain Current (ID) | 2A |
| Drain Current-Max (Abs) (ID) | 2A |
| Drain-source On Resistance-Max | 0.3Ohm |
| Pulsed Drain Current-Max (IDM) | 10A |
| DS Breakdown Voltage-Min | 50V |
| Avalanche Energy Rating (Eas) | 300 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | RoHS Compliant |
