MTP4N80E

MTP4N80E datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Utmel


  • Manufacturer: ON Semiconductor
  • NO: 598-MTP4N80E
  • Package: -
  • Datasheet: pdf
  • Stock: 4263
  • Description: MTP4N80E datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
Maximum Continuous Drain Current (A) 4
Typical Gate Charge @ Vgs (nC) 36@10V
Typical Gate Charge @ 10V (nC) 36
Typical Input Capacitance @ Vds (pF) 1320@25V
Maximum Power Dissipation (mW) 125000
Typical Fall Time (ns) 30
Typical Rise Time (ns) 36
Typical Turn-Off Delay Time (ns) 40
Typical Turn-On Delay Time (ns) 13
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 9.27(Max)
Package Width 4.57(Max)
Package Length 10.54(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-220
Supplier Package TO-220
Part Status Obsolete
Pin Count 3
Configuration Single
Channel Type N
Material Si
EU RoHS Not Compliant
ECCN (US) EAR99
SVHC Yes
SVHC Exceeds Threshold Yes
Automotive No
PPAP No
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 800
Maximum Gate Source Voltage (V) ±20

In Stock

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