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MSD1328-RT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MSD1328-RT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3013
- Description: MSD1328-RT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 5 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -500mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Base Voltage (VCBO) | 25V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 200 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MSD1328-RT1G Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 20mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MSD1328-RT1G Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is -500mA
MSD1328-RT1G Applications
There are a lot of ON Semiconductor MSD1328-RT1G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
