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MSB709-RT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MSB709-RT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1108
- Description: MSB709-RT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -45V |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -100mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MSB709 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA 10V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -500mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | -45V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 210 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MSB709-RT1G Overview
This device has a DC current gain of 210 @ 2mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 7V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.As a result, it can handle voltages as low as 45V volts.A maximum collector current of 100mA volts can be achieved.
MSB709-RT1G Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is -100mA
MSB709-RT1G Applications
There are a lot of ON Semiconductor MSB709-RT1G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
