MS1007

MS1007 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Microsemi Corporation stock available at Utmel


  • Manufacturer: Microsemi Corporation
  • NO: 523-MS1007
  • Package: M174
  • Datasheet: pdf
  • Stock: 13277
  • Description: MS1007 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Microsemi Corporation stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
Packaging Bulk
Published 2003
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature WITH EMITTER BALLASTING RESISTORS
Max Power Dissipation 233W
Terminal Position RADIAL
Terminal Form FLAT
Pin Count 4
Number of Elements 1
Configuration SINGLE
Output Power 150W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 55V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 18 @ 1.4A 6V
Collector Emitter Breakdown Voltage 55V
Gain 14dB
Max Frequency 30MHz
Frequency - Transition 30MHz
Collector Base Voltage (VCBO) 110V
Highest Frequency Band HIGH FREQUENCY B
Collector-Base Capacitance-Max 220pF
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case M174
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 200°C TJ

In Stock

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