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ContactMRFX1K80NR5
MRFX1K80NR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi
- Manufacturer: NXP Semiconductors
- NO: 318-MRFX1K80NR5
- Package: OM-1230-4L
- Datasheet:
- Stock: 3584
- Description: MRFX1K80NR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Package / Case | OM-1230-4L |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 1.8MHz~470MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Type | LDMOS |
| Gain | 24dB |
| Power - Output | 1800W |
| Voltage - Test | 65V |
| RoHS Status | ROHS3 Compliant |
MRFX1K80NR5 Description
High VSWR industrial, medical, broadcast, aerospace, and mobile radio applications call for the usage of this very robust equipment. Thanks to their unique input and output designs, they can be used at frequencies between 1.8 and 400 MHz. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
MRFX1K80NR5 Features
Input and output mismatches allow for the use of a wide frequency range
A push-pull or single-ended use of the device is possible.
Designed from 30 to 65 V for increased power range Certified up to a maximum of 65 VDD operation
Package with lower thermal resistance
High breakdown voltage to increase dependability
MRFX1K80NR5 Applications
laser production
plasma production
Accelerators for particles
RF ablation, MRI, and skin care
Systems for industrial heating, welding, and drying
