MRFG35010

MRFG35010 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi


  • Manufacturer: NXP Semiconductors
  • NO: 318-MRFG35010
  • Package: NI-360HF
  • Datasheet: pdf
  • Stock: 9759
  • Description: MRFG35010 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Package / Case NI-360HF
Surface Mount YES
Transistor Element Material GALLIUM ARSENIDE
Packaging Tube
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 15V
HTS Code 8541.29.00.75
Subcategory FET RF Small Signal
Terminal Position QUAD
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Frequency 3.55GHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRFG35010
JESD-30 Code R-PQSO-N4
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Case Connection SOURCE
Current - Test 130mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type pHEMT FET
Gain 10dB
DS Breakdown Voltage-Min 15V
Power - Output 9W
FET Technology HIGH ELECTRON MOBILITY
Voltage - Test 12V
RoHS Status ROHS3 Compliant

MRFG35010 Description


Designed for use with UMTS or WLL/MMDS drivers at frequencies between 1800 and 3600 MHz. Unsurpassed and appropriate for Class AB or Class A linear base station applications, the device is unmatched. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.



MRFG35010 Features


? 10 W P 1 dB at 3550 MHz


? Excellent Group Delay and Phase Linearity Characteristics


? High Linearity, High Gain, and High Efficiency


? RoHS conformant


? on reel-to-reel tape. 500 Units per 32 mm, 13 inch Reel, R1 Suffix.



MRFG35010 Applications


Switching applications


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