MRFE6VP61K25HR5

MRFE6VP61K25HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi


  • Manufacturer: NXP Semiconductors
  • NO: 318-MRFE6VP61K25HR5
  • Package: NI-1230
  • Datasheet: pdf
  • Stock: 1004
  • Description: MRFE6VP61K25HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Package / Case NI-1230
Packaging Tape & Reel (TR)
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 133V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 230MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRFE6VP61K25
Operating Temperature (Max) 225°C
Current - Test 100mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 24dB
Power - Output 1250W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 1300W
Voltage - Test 50V
RoHS Status ROHS3 Compliant

MRFE6VP61K25HR5 Description


These highly durable devices are intended for use in high VSWR industrial applications, including as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications. They have mismatched input and output configurations that enable frequency ranges between 1.8 and 600 MHz to be utilized.



MRFE6VP61K25HR5 Features


  • Utilization of a Wide Frequency Range Due to Unmatched Input and Output

  • The device can be used in a push-pull or single-ended configuration.

  • Qualified Up to 50 VDD Operation Maximum

  • characterized by a longer power range of 30 to 50 V

  • Appropriate Biasing and Suitability for Linear Application

  • ESD Protection Integrated with G



MRFE6VP61K25HR5 Applications


Switching applications


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