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| Parameters | |
|---|---|
| Package / Case | NI-360 |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated | 65V |
| Frequency | 945MHz |
| Base Part Number | MRF9060 |
| Current - Test | 450mA |
| Transistor Type | LDMOS |
| Gain | 17dB |
| Power - Output | 60W |
| Voltage - Test | 26V |
| RoHS Status | ROHS3 Compliant |
MRF9060LR5 developed by NXP USA Inc. is a type of N-channel enhancement-mode lateral MOSFET. It is able to deliver integrated ESD protection and excellent thermal stability. These features make it well suited for broadband commercial and industrial applications with frequencies up to 1000 MHz. With high gain and broadband performance, the MRF9060LR5 MOSFET provides optimum performance for large-signal, common-source amplifier applications in 26 volt base station equipment.
Integrated ESD protection
Excellent thermal stability
Output power-60 Watts PEP
Power gain -17 dB
Efficiency - 40%
Amplifier applications
Please send RFQ , we will respond immediately.