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ContactMRF8P9210NR3
MRF8P9210NR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi
- Manufacturer: NXP Semiconductors
- NO: 318-MRF8P9210NR3
- Package: NI-780-4
- Datasheet:
- Stock: 5305
- Description: MRF8P9210NR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated | 70V |
| HTS Code | 8541.29.00.75 |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 960MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Current - Test | 750mA |
| Transistor Type | N-Channel |
| Gain | 16.8dB |
| Power - Output | 63W |
| Voltage - Test | 28V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 10 Weeks |
| Package / Case | NI-780-4 |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
MRF8P9210NR3 Description
Constructed for 920 to 960 MHz CDMA base station applications. Suitable for all common cellular base station modulation formats in Class AB and Class C. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.
MRF8P9210NR3 Features
? Symmetrical Doherty Configuration Production Tested
? Complete PAR Guaranteed Output Power Capability Tested
? Characterized by Common Source S-Parameters and Large Signal Load Pull Parameters
? Internally Matching for User-Friendliness
? Protection from Integrated ESD
? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range
MRF8P9210NR3 Applications
Switching applications
