MRF6VP11KHR6

MRF6VP11KHR6 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi


  • Manufacturer: NXP Semiconductors
  • NO: 318-MRF6VP11KHR6
  • Package: NI-1230
  • Datasheet: pdf
  • Stock: 916
  • Description: MRF6VP11KHR6 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Package / Case NI-1230
Packaging Tape & Reel (TR)
Published 2010
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Voltage - Rated 110V
HTS Code 8541.29.00.75
Frequency 130MHz
Base Part Number MRF6VP11
Current - Test 150mA
Transistor Type LDMOS (Dual)
Gain 26dB
Power - Output 1000W
Voltage - Test 50V
RoHS Status ROHS3 Compliant

MRF6VP11KHR6 Description


Primarily intended for pulse wideband applications at up to 150 MHz in frequency. The equipment is superior and appropriate for use in industrial, medicinal, and scientific applications. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.



MRF6VP11KHR6 Features


? characterized by large-signal series equivalent impedance parameters


? The capacity to operate CW systems with adequate cooling


? Up to a Maximum of 50 VDD Operation Qualified


? Protection from Integrated ESD


? Created with Push-Pull Operation in Mind


? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range


? on reel-to-reel tape. 150 Units, 56 mm Tape Width, 13 inch Reel; R6 Suffix. 50 Units, 56 mm Tape Width, 13 Inch Reel; R5 Suffix.



MRF6VP11KHR6 Applications


Switching applications


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