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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Package / Case | TO-272BB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated | 110V |
| HTS Code | 8541.29.00.75 |
| Subcategory | FET General Purpose Power |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 220MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MRF6V2300 |
| JESD-30 Code | R-PDFM-F4 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 225°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 900mA |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| JEDEC-95 Code | TO-270AA |
| Gain | 25.5dB |
| DS Breakdown Voltage-Min | 110V |
| Power - Output | 300W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 50V |
| RoHS Status | ROHS3 Compliant |
MRF6V2300NBR5 Description
MRF6V2300NBR5 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes MRF6V2300NBR5 N-channel transistor suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6V2300NBR5 has the common source configuration.
MRF6V2300NBR5 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRF6V2300NBR5 Applications
ISM applications
DC large signal applications
Please send RFQ , we will respond immediately.