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ContactMRF6V2010NBR1
MRF6V2010NBR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi
- Manufacturer: NXP Semiconductors
- NO: 318-MRF6V2010NBR1
- Package: TO-272BC
- Datasheet:
- Stock: 6919
- Description: MRF6V2010NBR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Package / Case | TO-272BC |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated | 110V |
| HTS Code | 8541.29.00.75 |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 220MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MRF6V2010 |
| JESD-30 Code | R-PDFM-F2 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 225°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 30mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Gain | 23.9dB |
| DS Breakdown Voltage-Min | 110V |
| Power - Output | 10W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 50V |
| RoHS Status | Non-RoHS Compliant |
MRF6V2010NBR1 Description
Principally intended for CW large-signal output and driver applications at up to 450 MHz in frequency. The equipment is superior and appropriate for use in industrial, medicinal, and scientific applications. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
MRF6V2010NBR1 Features
Characterized by parameters for the series equivalent of large-signal impedance
qualified up to 50 VDD operations in total
Integrated ESD defense
polypropylene container capable of 225°C
MRF6V2010NBR1 Applications
Switching applications
