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ContactMRF101AN
MRF101AN datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi
- Manufacturer: NXP Semiconductors
- NO: 318-MRF101AN
- Package: TO-220-3
- Datasheet:
- Stock: 5020
- Description: MRF101AN datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Package / Case | TO-220-3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated | 133V |
| Current Rating (Amps) | 10μA |
| Frequency | 1.8MHz~250MHz |
| Current - Test | 100mA |
| Transistor Type | LDMOS |
| Gain | 21.1dB |
| Power - Output | 115W |
| Voltage - Test | 50V |
| RoHS Status | ROHS3 Compliant |
Description
The MRF101AN is an RF Power LDMOS Transistor, High Ruggedness N-Channel, Enhancement-Mode Lateral MOSFETs. These gadgets are made for HF and VHF communications, as well as industrial, scientific, and medical (ISM), broadcast, and aerospace applications. The equipment is very durable and performs well up to 250 MHz.
Features
Integrated ESD protection with greater negative gate-source
Voltage range for improved Class C operation
Included in NXP product longevity program with assured
Supply for a minimum of 15 years after launch
Mirror pinout versions (A and B) to simplify use in a push-pull,
Two-up configuration
Characterized from 30 to 50 V
Suitable for linear application
Applications
Radio and VHF TV broadcast
HF and VHF communications
Switch mode power supplies
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
