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MPSW51ARLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPSW51ARLRAG
- Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet:
- Stock: 5494
- Description: MPSW51ARLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -700mV |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 55 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 4 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -1A |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MPSW51A |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
MPSW51ARLRAG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 100mA 1V.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.A VCE saturation (Max) of 700mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MPSW51ARLRAG Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 50MHz
MPSW51ARLRAG Applications
There are a lot of ON Semiconductor MPSW51ARLRAG applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
