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MPSW45RLREG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPSW45RLREG
- Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet:
- Stock: 6154
- Description: MPSW45RLREG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 4 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| HTS Code | 8541.29.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MPSW45 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 1.5V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25000 @ 200mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 1A |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 100MHz |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 25000 |
| Continuous Collector Current | 1A |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MPSW45RLREG Overview
DC current gain in this device equals 25000 @ 200mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 2mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
MPSW45RLREG Features
the DC current gain for this device is 25000 @ 200mA 5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz
MPSW45RLREG Applications
There are a lot of ON Semiconductor MPSW45RLREG applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
