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MPSW45AZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPSW45AZL1G
- Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet:
- Stock: 5279
- Description: MPSW45AZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Transistor Application | AMPLIFIER |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25000 @ 200mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 1A |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 1.5V |
| Max Breakdown Voltage | 40V |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 12V |
| Continuous Collector Current | 1A |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 weeks ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2010 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | EUROPEAN PART NUMBER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MPSW45A |
| Pin Count | 3 |
| Number of Elements | 1 |
MPSW45AZL1G Overview
This device has a DC current gain of 25000 @ 200mA 5V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.A VCE saturation (Max) of 1.5V @ 2mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 1A for high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 100MHz.The breakdown input voltage is 40V volts.Collector current can be as low as 1A volts at its maximum.
MPSW45AZL1G Features
the DC current gain for this device is 25000 @ 200mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz
MPSW45AZL1G Applications
There are a lot of ON Semiconductor MPSW45AZL1G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
