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MPSW05 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPSW05
- Package: TO-226-3, TO-92-3 Long Body
- Datasheet:
- Stock: 7106
- Description: MPSW05 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2009 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.29.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 500mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 250mA 1V |
| Current - Collector Cutoff (Max) | 500nA |
| JEDEC-95 Code | TO-226AE |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 10mA, 250mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 80 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
MPSW05 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 250mA 1V DC current gain.A collector emitter saturation voltage of 400mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 10mA, 250mA.Emitter base voltages of 4V can achieve high levels of efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 50MHz.Collector current can be as low as 500mA volts at its maximum.
MPSW05 Features
the DC current gain for this device is 60 @ 250mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSW05 Applications
There are a lot of ON Semiconductor MPSW05 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
