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MPSA93G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPSA93G
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 2874
- Description: MPSA93G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 30mA 10V |
| Current - Collector Cutoff (Max) | 250nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 2mA, 20mA |
| Collector Emitter Breakdown Voltage | 200V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Base Voltage (VCBO) | -300V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 25 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2009 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -200V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -500mA |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MPSA93 |
| Pin Count | 3 |
MPSA93G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 30mA 10V.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.In this part, there is a transition frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA93G Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 400mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA93G Applications
There are a lot of ON Semiconductor MPSA93G applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
