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MPSA70RLRM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPSA70RLRM
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 3474
- Description: MPSA70RLRM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2006 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | -100mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 125MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 5mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 40V |
| Current - Collector (Ic) (Max) | 100mA |
| Transition Frequency | 125MHz |
| Collector Emitter Saturation Voltage | -250mV |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 40 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
MPSA70RLRM Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 5mA 10V.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 1mA, 10mA.Keeping the emitter base voltage at 4V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.As a result, the part has a transition frequency of 125MHz.Collector current can be as low as 100mA volts at its maximum.
MPSA70RLRM Features
the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is -100mA
a transition frequency of 125MHz
MPSA70RLRM Applications
There are a lot of ON Semiconductor MPSA70RLRM applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
