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MPSA63G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPSA63G
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 2430
- Description: MPSA63G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 6 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | -500mA |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | MPSA63 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | SWITCHING |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100μA, 100mA |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 125MHz |
| Collector Emitter Saturation Voltage | 1.5V |
| Frequency - Transition | 125MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 10V |
| Continuous Collector Current | -500mA |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MPSA63G Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.A constant collector voltage of -500mA is necessary for high efficiency.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).In this part, there is a transition frequency of 125MHz.A maximum collector current of 500mA volts is possible.
MPSA63G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA63G Applications
There are a lot of ON Semiconductor MPSA63G applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
