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MPSA55RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPSA55RLRAG
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 7594
- Description: MPSA55RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 13 hours ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -500mA |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MPSA55 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 100 |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MPSA55RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 4V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.Collector current can be as low as 500mA volts at its maximum.
MPSA55RLRAG Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA55RLRAG Applications
There are a lot of ON Semiconductor MPSA55RLRAG applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
