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MPSA27G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPSA27G
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 1860
- Description: MPSA27G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 500mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MPSA27 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | AMPLIFIER |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100μA, 100mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 125MHz |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 10000 |
| Continuous Collector Current | 500mA |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MPSA27G Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 125MHz.Collector current can be as low as 500mA volts at its maximum.
MPSA27G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA27G Applications
There are a lot of ON Semiconductor MPSA27G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
