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MPSA20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPSA20
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 6410
- Description: MPSA20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92-3 |
| Weight | 201mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 625mW |
| Current Rating | 500mA |
| Base Part Number | MPSA20 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Power - Max | 625mW |
| Gain Bandwidth Product | 125MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 5mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 40V |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 100mA |
| Collector Emitter Saturation Voltage | 250mV |
| Max Breakdown Voltage | 40V |
| Frequency - Transition | 125MHz |
| Collector Base Voltage (VCBO) | 4V |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 40 |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Lead Free |
MPSA20 Overview
In this device, the DC current gain is 40 @ 5mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 1mA, 10mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.This device can take an input voltage of 40V volts before it breaks down.There is no device package available from the supplier for this product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.When collector current reaches its maximum, it can reach 100mA volts.
MPSA20 Features
the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
the supplier device package of TO-92-3
MPSA20 Applications
There are a lot of ON Semiconductor MPSA20 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
