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NPN - Darlington-55°C~150°C TJ100nA ICBO1 Elements3 TerminationsSILICONNPNTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)BulkThrough Hole
- Manufacturer: Micro Commercial Co
- NO: 543-MPSA13-AP
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 8703
- Description: NPN - Darlington-55°C~150°C TJ100nA ICBO1 Elements3 TerminationsSILICONNPNTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)BulkThrough Hole(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 5 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power - Max | 1.5W |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN - Darlington |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100μA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Current - Collector (Ic) (Max) | 500mA |
| Transition Frequency | 125MHz |
| Frequency - Transition | 125MHz |
| RoHS Status | ROHS3 Compliant |
MPSA13-AP Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.Parts of this part have transition frequencies of 125MHz.The device exhibits a collector-emitter breakdown at 30V.
MPSA13-AP Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz
MPSA13-AP Applications
There are a lot of Micro Commercial Co MPSA13-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
