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MPSA05RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPSA05RLRA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 6693
- Description: MPSA05RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 2 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2007 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn80Pb20) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 500mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | MPSA05 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 100 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
MPSA05RLRA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 4V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).As a result, the part has a transition frequency of 100MHz.A maximum collector current of 500mA volts can be achieved.
MPSA05RLRA Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RLRA Applications
There are a lot of ON Semiconductor MPSA05RLRA applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
