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MPS751ZL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPS751ZL1
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 6623
- Description: MPS751ZL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2004 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | EUROPEAN PART NUMBER |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | -2A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | MPS751 |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 75MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 60V |
| Current - Collector (Ic) (Max) | 2A |
| Transition Frequency | 75MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 75 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
MPS751ZL1 Overview
In this device, the DC current gain is 75 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.Emitter base voltages of 5V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -2A.The part has a transition frequency of 75MHz.In extreme cases, the collector current can be as low as 2A volts.
MPS751ZL1 Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz
MPS751ZL1 Applications
There are a lot of ON Semiconductor MPS751ZL1 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
