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MPS751RLRPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPS751RLRPG
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 2736
- Description: MPS751RLRPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -2A |
| Frequency | 75MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MPS751 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 75MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 75MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 75 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MPS751RLRPG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A 2V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2A.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MPS751RLRPG Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz
MPS751RLRPG Applications
There are a lot of ON Semiconductor MPS751RLRPG applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
