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MPS750RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPS750RLRA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 7803
- Description: MPS750RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 40V |
| Current - Collector (Ic) (Max) | 2A |
| Transition Frequency | 75MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 75 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | -2A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | MPS750 |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 75MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
MPS750RLRA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A 2V.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 75MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MPS750RLRA Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz
MPS750RLRA Applications
There are a lot of ON Semiconductor MPS750RLRA applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
