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MPS6729G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPS6729G
- Package: TO-226-3, TO-92-3 Long Body
- Datasheet:
- Stock: 7194
- Description: MPS6729G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| HTS Code | 8541.29.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Current Rating | -500mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 1W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 250mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 250mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Base Voltage (VCBO) | -80V |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 80 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | OBSOLETE (Last Updated: 6 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
MPS6729G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 250mA 1V DC current gain.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.When VCE saturation is 500mV @ 10mA, 250mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPS6729G Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPS6729G Applications
There are a lot of ON Semiconductor MPS6729G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
