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MPS6651G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPS6651G
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 9258
- Description: MPS6651G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -25V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 600mV |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Base Voltage (VCBO) | 25V |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 50 |
| Turn Off Time-Max (toff) | 75ns |
| Turn On Time-Max (ton) | 280ns |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | OBSOLETE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
MPS6651G Overview
In this device, the DC current gain is 50 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).As a result, the part has a transition frequency of 100MHz.When collector current reaches its maximum, it can reach 1A volts.
MPS6651G Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz
MPS6651G Applications
There are a lot of ON Semiconductor MPS6651G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
