MPS6602RLRAG

MPS6602RLRAG Overview

In this device, the DC current gain is 50 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In the part, the transition frequency is 100MHz.Collector current can be as low as 1A volts at its maximum.

MPS6602RLRAG Features

the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz

MPS6602RLRAG Applications

There are a lot of ON Semiconductor MPS6602RLRAG applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter