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MPS4126RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPS4126RLRAG
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 5564
- Description: MPS4126RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -25V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -200mA |
| Frequency | 170MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MPS4126 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625W |
| Power - Max | 625mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 170MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA 1V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 170MHz |
| Collector Emitter Saturation Voltage | -400mV |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | -25V |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 120 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MPS4126RLRAG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 1V DC current gain.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 170MHz in the part.Breakdown input voltage is 25V volts.Collector current can be as low as 200mA volts at its maximum.
MPS4126RLRAG Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is -200mA
a transition frequency of 170MHz
MPS4126RLRAG Applications
There are a lot of ON Semiconductor MPS4126RLRAG applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
