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MPS2369RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPS2369RLRAG
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 6576
- Description: MPS2369RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 15V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Current Rating | 200mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MPS2369 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA 1V |
| Current - Collector Cutoff (Max) | 400nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 15V |
| Transition Frequency | 500MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 4.5V |
| hFE Min | 40 |
| Turn Off Time-Max (toff) | 18ns |
| Turn On Time-Max (ton) | 12ns |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MPS2369RLRAG Overview
DC current gain in this device equals 40 @ 10mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 1mA, 10mA.Emitter base voltages of 4.5V can achieve high levels of efficiency.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 500MHz is present in the part.In extreme cases, the collector current can be as low as 200mA volts.
MPS2369RLRAG Features
the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MPS2369RLRAG Applications
There are a lot of ON Semiconductor MPS2369RLRAG applications of single BJT transistors.
Driver
Inverter
Interface
Muting
