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MPS2369RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MPS2369RLRA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 9137
- Description: MPS2369RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 15V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 200mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | MPS2369 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 15V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA 1V |
| Current - Collector Cutoff (Max) | 400nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 15V |
| Transition Frequency | 500MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 4.5V |
| hFE Min | 40 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
MPS2369RLRA Overview
In this device, the DC current gain is 40 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4.5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.As you can see, the part has a transition frequency of 500MHz.Maximum collector currents can be below 200mA volts.
MPS2369RLRA Features
the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MPS2369RLRA Applications
There are a lot of ON Semiconductor MPS2369RLRA applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
