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MMUN2213LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMUN2213LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1494
- Description: MMUN2213LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Operating Supply Voltage | 50V |
| Length | 2.9mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Current Rating | 100mA |
| Radiation Hardening | No |
| Number of Pins | 3 |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| REACH SVHC | No SVHC |
| Height | 940μm |
| Width | 1.3mm |
| Mounting Type | Surface Mount |
| Voltage - Rated DC | 50V |
| JESD-609 Code | e3 |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMUN22**L |
| Pin Count | 3 |
| Surface Mount | YES |
| Subcategory | BIP General Purpose Small Signal |
| Max Power Dissipation | 246mW |
| Number of Elements | 1 |
| Max Output Current | 100mA |
| Polarity | NPN |
| Halogen Free | Halogen Free |
| Element Configuration | Single |
| Power Dissipation | 246mW |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector Cutoff (Max) | 500nA |
| Collector Emitter Saturation Voltage | 250mV |
| Continuous Collector Current | 100mA |
| hFE Min | 80 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
| Resistor - Base (R1) | 47 k Ω |
| Resistor - Emitter Base (R2) | 47 k Ω |
MMUN2113LT1G Description
The ON Semiconductor MMUN2113LT1G is a PNP Transistor with a Monolithic Bias Resistor Network. The digital transistor is designed to replace a single device and its external resistor bias network.
MMUN2113LT1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
MMUN2113LT1G Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
