MMUN2113LT1G

MMUN2113LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
NO: 598-MMUN2113LT1G
Package: TO-236-3, SC-59, SOT-23-3
Datasheet:
Stock: 188
Description: MMUN2113LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Operating Supply Voltage	50V
Length	2.9mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Current Rating	-100mA
Radiation Hardening	No
Number of Pins	3
Additional Feature	BUILT-IN BIAS RESISTOR RATIO 1
Package / Case	TO-236-3, SC-59, SOT-23-3
REACH SVHC	No SVHC
Height	940μm
Width	1.3mm
Mounting Type	Surface Mount
Voltage - Rated DC	-50V
HTS Code	8541.21.00.95
JESD-609 Code	e3
Terminal Finish	Tin (Sn)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	MMUN21**L
Pin Count	3
Surface Mount	YES
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	246mW
Number of Elements	1
Max Output Current	100mA
Polarity	PNP
Halogen Free	Halogen Free
Element Configuration	Single
Power Dissipation	246mW
Max Breakdown Voltage	50V
Max Collector Current	100mA
Collector Emitter Breakdown Voltage	50V
Collector Emitter Voltage (VCEO)	50V
Transistor Application	SWITCHING
Transistor Type	PNP - Pre-Biased
Current - Collector Cutoff (Max)	500nA
Collector Emitter Saturation Voltage	250mV
Continuous Collector Current	100mA
hFE Min	80
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Resistor - Base (R1)	47 k Ω
Resistor - Emitter Base (R2)	47 k Ω
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Packaging	Tape & Reel (TR)
Published	2001

MMUN2213LT1G Description

The ON Semiconductor MMUN2213LT1G is an NPN digital transistor in 3 pin SOT-23 (TO?236) package. The digital transistor is designed to replace a single device and its external resistor bias network.

MMUN2213LT1G Features

Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable