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MMSTA64T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-MMSTA64T146
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 9750
- Description: MMSTA64T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 10000 |
| Continuous Collector Current | 500mA |
| Collector-Base Capacitance-Max | 7pF |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 7 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| HTS Code | 8541.21.00.75 |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 125MHz |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 300mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Collector Emitter Breakdown Voltage | 30V |
| Current - Collector (Ic) (Max) | 300mA |
| Transition Frequency | 125MHz |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Base Voltage (VCBO) | 30V |
MMSTA64T146 Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Keeping the emitter base voltage at 10V can result in a high level of efficiency.As you can see, the part has a transition frequency of 125MHz.In extreme cases, the collector current can be as low as 300mA volts.
MMSTA64T146 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
MMSTA64T146 Applications
There are a lot of ROHM Semiconductor MMSTA64T146 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
