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MMST5551-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-MMST5551-7-F
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 8381
- Description: MMST5551-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 19 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
| Supplier Device Package | SOT-323 |
| Weight | 6.010099mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 160V |
| Max Power Dissipation | 200mW |
| Current Rating | 200mA |
| Frequency | 300MHz |
| Base Part Number | MMST5551 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Power - Max | 200mW |
| Gain Bandwidth Product | 300MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 160V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 160V |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| Current - Collector (Ic) (Max) | 200mA |
| Max Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 200mV |
| Max Breakdown Voltage | 160V |
| Frequency - Transition | 300MHz |
| Collector Base Voltage (VCBO) | 180V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 80 |
| Height | 1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMST5551-7-F Overview
This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.There is a breakdown input voltage of 160V volts that it can take.Single BJT transistor comes in a supplier device package of SOT-323.There is a 160V maximal voltage in the device due to collector-emitter breakdown.The maximum collector current is 200mA volts.
MMST5551-7-F Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
the supplier device package of SOT-323
MMST5551-7-F Applications
There are a lot of Diodes Incorporated MMST5551-7-F applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
