MMST4403T146

MMST4403T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-MMST4403T146
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 1597
  • Description: MMST4403T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 59
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -600mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number T4403
Pin Count 3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Element Configuration Single
Power - Max 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 750mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 200MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -6V
hFE Min 20
VCEsat-Max 0.6 V
Turn Off Time-Max (toff) 255ns
Turn On Time-Max (ton) 35ns
Collector-Base Capacitance-Max 7pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMST4403T146 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 1V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.The base voltage of the emitter can be kept at -6V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.A maximum collector current of 600mA volts can be achieved.

MMST4403T146 Features


the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -600mA
a transition frequency of 200MHz

MMST4403T146 Applications


There are a lot of ROHM Semiconductor MMST4403T146 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

In Stock

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