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MMST2222A-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-MMST2222A-7-F
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 8587
- Description: MMST2222A-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 19 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
| Weight | 6.010099mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 600mA |
| Frequency | 300MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMST2222A |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 10nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 1V |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 75V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 100 |
| Continuous Collector Current | 600mA |
| Turn Off Time-Max (toff) | 285ns |
| Height | 1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMST2222A-7-F Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.For high efficiency, the continuous collector voltage must be kept at 600mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).300MHz is present in the transition frequency.A breakdown input voltage of 40V volts can be used.Collector current can be as low as 600mA volts at its maximum.
MMST2222A-7-F Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
MMST2222A-7-F Applications
There are a lot of Diodes Incorporated MMST2222A-7-F applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
