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ContactMMSS8550-H-TP
MMSS8550-H-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available at Feilidi
- Manufacturer: Micro Commercial Components (MCC)
- NO: 543-MMSS8550-H-TP
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3288
- Description: MMSS8550-H-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | MMSS8550 |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 625mW |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 1.5A |
| Transition Frequency | 100MHz |
| Frequency - Transition | 100MHz |
| Power Dissipation-Max (Abs) | 0.625W |
| RoHS Status | ROHS3 Compliant |
MMSS8550-H-TP Overview
In this device, the DC current gain is 120 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 80mA, 800mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.The device has a 25V maximal voltage - Collector Emitter Breakdown.
MMSS8550-H-TP Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 80mA, 800mA
a transition frequency of 100MHz
MMSS8550-H-TP Applications
There are a lot of Micro Commercial Co MMSS8550-H-TP applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
