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ContactMMSS8050-H-TP
MMSS8050-H-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available at Feilidi
- Manufacturer: Micro Commercial Components (MCC)
- NO: 543-MMSS8050-H-TP
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 2068
- Description: MMSS8050-H-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | MMSS8050 |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 625mW |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 1.5A |
| Transition Frequency | 100MHz |
| Frequency - Transition | 100MHz |
| Power Dissipation-Max (Abs) | 0.3W |
| RoHS Status | ROHS3 Compliant |
MMSS8050-H-TP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 80mA, 800mA.As you can see, the part has a transition frequency of 100MHz.There is a 25V maximal voltage in the device due to collector-emitter breakdown.
MMSS8050-H-TP Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 80mA, 800mA
a transition frequency of 100MHz
MMSS8050-H-TP Applications
There are a lot of Micro Commercial Co MMSS8050-H-TP applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
