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ContactMMS8050-L-TP
NPN-55°C~150°C TJ100nA ICBO1 Elements3 TerminationsSILICONNPNTO-236-3, SC-59, SOT-23-3Tape & Reel (TR)Surface Mount
- Manufacturer: Micro Commercial Co
- NO: 543-MMS8050-L-TP
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 4724
- Description: NPN-55°C~150°C TJ100nA ICBO1 Elements3 TerminationsSILICONNPNTO-236-3, SC-59, SOT-23-3Tape & Reel (TR)Surface Mount(Kg)
- Delivery:
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In Stock
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| Parameters | |
|---|---|
| Power Dissipation-Max (Abs) | 0.3W |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 300mW |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 500mA |
| Transition Frequency | 150MHz |
| Frequency - Transition | 150MHz |
MMS8050-L-TP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 50mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 50mA, 500mA.150MHz is present in the transition frequency.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MMS8050-L-TP Features
the DC current gain for this device is 120 @ 50mA 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA
a transition frequency of 150MHz
MMS8050-L-TP Applications
There are a lot of Micro Commercial Co MMS8050-L-TP applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
