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ContactMMRF5017HSR5
MMRF5017HSR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi
- Manufacturer: NXP Semiconductors
- NO: 318-MMRF5017HSR5
- Package: NI-400S-2S
- Datasheet:
- Stock: 6013
- Description: MMRF5017HSR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Package / Case | NI-400S-2S |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Voltage - Rated | 150V |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 30MHz~2.2GHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Current - Test | 200mA |
| Transistor Type | HEMT |
| Gain | 18.4dB |
| Power - Output | 125W |
| Voltage - Test | 50V |
| RoHS Status | ROHS3 Compliant |
MMRF5017HSR5 Description
MMRF5017HSR5 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MMRF5017HSR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MMRF5017HSR5 has the common source configuration.
MMRF5017HSR5 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MMRF5017HSR5 Applications
ISM applications
DC large signal applications
