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PNP-55°C~150°C TJ1 Elements4 TerminationsSILICONPNPTO-261-4, TO-261AATape & Reel (TR)Surface Mount
- Manufacturer: ON Semiconductor
- NO: 598-MMJT9435T1
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 4862
- Description: PNP-55°C~150°C TJ1 Elements4 TerminationsSILICONPNPTO-261-4, TO-261AATape & Reel (TR)Surface Mount(Kg)
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| Parameters | |
|---|---|
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | -3A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | MMJT9435 |
| Pin Count | 4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 3W |
| Gain Bandwidth Product | 110MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 550mV |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 800mA 1V |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 300mA, 3A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 110MHz |
| Collector Emitter Saturation Voltage | 155mV |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | 45V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 125 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 3W |
| Terminal Position | DUAL |
MMJT9435T1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 800mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 155mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 550mV @ 300mA, 3A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 110MHz.This device can take an input voltage of 30V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MMJT9435T1 Features
the DC current gain for this device is 125 @ 800mA 1V
a collector emitter saturation voltage of 155mV
the vce saturation(Max) is 550mV @ 300mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is -3A
a transition frequency of 110MHz
MMJT9435T1 Applications
There are a lot of ON Semiconductor MMJT9435T1 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
