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NPN-55°C~150°C TJ1 Elements3 TerminationsSILICONNPNTO-261-4, TO-261AATape & Reel (TR)Surface Mount
- Manufacturer: ON Semiconductor
- NO: 598-MMJT9410T1G
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 6342
- Description: NPN-55°C~150°C TJ1 Elements3 TerminationsSILICONNPNTO-261-4, TO-261AATape & Reel (TR)Surface Mount(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 3W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3A |
| Frequency | 72MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMJT9410 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.7W |
| Case Connection | COLLECTOR |
| Gain Bandwidth Product | 72MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 800mA 1V |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 300mA, 3A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 72MHz |
| Collector Emitter Saturation Voltage | 150mV |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | 45V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 85 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MMJT9410T1G Overview
This device has a DC current gain of 85 @ 800mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 150mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 450mV @ 300mA, 3A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.In this part, there is a transition frequency of 72MHz.There is a breakdown input voltage of 30V volts that it can take.When collector current reaches its maximum, it can reach 3A volts.
MMJT9410T1G Features
the DC current gain for this device is 85 @ 800mA 1V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 72MHz
MMJT9410T1G Applications
There are a lot of ON Semiconductor MMJT9410T1G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
