MMDT3904-7-F

DIODES INC. - MMDT3904-7-F - Bipolar Transistor Array, NPN, 40 V, 200 mW, 200 mA, 100 hFE, SOT-363


  • Manufacturer: Diodes Incorporated
  • NO: 233-MMDT3904-7-F
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: pdf
  • Stock: 2000
  • Description: DIODES INC. - MMDT3904-7-F - Bipolar Transistor Array, NPN, 40 V, 200 mW, 200 mA, 100 hFE, SOT-363 (Kg)

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The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 19 Weeks
Mount Surface Mount
Packaging Tape & Reel (TR)
Published 2007
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Length 2.2mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Current Rating 200mA
Radiation Hardening No
Number of Pins 6
Package / Case 6-TSSOP, SC-88, SOT-363
REACH SVHC No SVHC
Frequency 300MHz
Height 1mm
Width 1.35mm
Mounting Type Surface Mount
Weight 6.010099mg
Operating Temperature -55°C~150°C TJ
Voltage - Rated DC 40V
JESD-609 Code e3
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMDT3904
Pin Count 6
Subcategory Other Transistors
Max Power Dissipation 200mW
Reference Standard AEC-Q101
Number of Elements 2
Polarity NPN
Gain Bandwidth Product 300MHz
Element Configuration Dual
Power Dissipation 200mW
Turn On Delay Time 70 ns
Max Breakdown Voltage 40V
Max Collector Current 200mA
Collector Emitter Breakdown Voltage 40V
Collector Emitter Voltage (VCEO) 40V
Transistor Application SWITCHING
Turn-Off Delay Time 250 ns
Transistor Element Material SILICON
Transistor Type 2 NPN (Dual)
Transition Frequency 300MHz
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Saturation Voltage 300mV
Continuous Collector Current 200mA
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
See Relate Datesheet

In Stock

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